q?v~zy??q?v?_rb]{|?aqcabfq HFS2N60FS bv dss = 600 v r ds(on) typ
i d = 2 a HFS2N60FS 600v n-channel mosfet 1.gate 2. drain 3. source absolute maximum ratings t c =25 e unless otherwise specified symbol parameter value units v dss drain-source voltage 600 v i d drain current ? continuous (t c = 25 e ) 2 * a drain current ? continuous (t c = 100 e ) 1.3 * a i dm drain current ? pulsed (note 1) 8 * a v gs gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 110 mj i ar avalanche current (note 1) 2 a e ar repetitive avalanche energy (note 1) 2.3 mj p d power dissipation (t c = 25 e ) - derate above 25 e 23 w 0.18 w/ e t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e thermal resistance characteristics symbol parameter typ. max. units r jc junction-to-case -- 5.5 e /w r ja junction-to-ambient -- 62.5 * drain current limited by maximum junction temperature july 2015 ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 6.5 nc (typ.) ? extended safe operating area ? lower r ds(on) :
(typ.) @v gs =10v ? 100% avalanche tested ? single gauge package features 2 1 3 to-220f
q?v~zy??q?v?_rb]{|?aqcabfq HFS2N60FS electrical characteristics t j =25 q c unless otherwise specified symbol parameter test conditions min typ max units i s continuous source-drain diode forward current -- -- 2 a i sm pulsed source-drain diode forward current -- -- 8 v sd source-drain diode forward voltage i s = 2 a, v gs = 0 v -- -- 1.4 v trr reverse recovery time i s = 2 a, v gs = 0 v di f /dt = 100 a/ v (note 4) -- 200 -- qrr reverse recovery charge -- 0.7 -- & on characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 3 600 -- -- v i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v -- -- 10 3 v ds = 480 v, t c = 125 e -- -- 100 3 i gss gate-body leakage current v gs = 30 v, v ds = 0 v -- -- 100 2 off characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 290 -- ? c oss output capacitance -- 37 -- ? c rss reverse transfer capacitance -- 4.5 -- ? dynamic characteristics t d(on) turn-on time v ds = 300 v, i d = 2 a, r g = 25 ? (note 4,5) -- 16 -- t r turn-on rise time -- 17 -- t d(off) turn-off delay time -- 28 -- t f turn-off fall time -- 20 -- q g total gate charge v ds = 480 v, i d = 2 a, v gs = 10 v (note 4,5) -- 6.5 -- nc q gs gate-source charge -- 1.5 -- nc q gd gate-drain charge -- 2.2 -- nc switching characteristics source-drain diode maximum ratings and characteristics v gs gate threshold voltage v ds = v gs , i d = 250 3 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 1 a -- 3.6 4.5 ? notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=50mh, i as =2.0a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ g l g w ? $ v 9 dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & \ f o h ? 5. essentially independent of operating temperature
q?v~zy??q?v?_rb]{|?aqcabfq HFS2N60FS typical characteristics figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figur e 6. gate charge characteristics 01234567 0 2 4 6 8 10 12 v gs , gate-source voltage [v] q g , total gate charge [nc] * note : i d = 2.0a v ds = 300v v ds = 120v v ds = 480v 10 -1 10 0 10 1 0 100 200 300 400 500 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 2345678910 0.1 1 -25 o c 25 o c * notes : 1. v ds = 30v 2. 300us pulse test v gs , gate-source voltage [v] i d , drain current [a] 150 o c 0.20.40.60.81.01.21.41.61.8 0.1 1 25 o c * notes : 1. v gs = 0v 2. 300us pulse test v sd , source-drain voltage [v] i dr , reverse drain current [a] 150 o c 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 5.0 v * notes : 1. 300us pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 012345 0 3 6 9 12 i d , drain current[a] r ds(on) [ : ], drain-source on-resistance v gs = 10v v gs = 20v * note : t j = 25 o c
q?v~zy??q?v?_rb]{|?aqcabfq HFS2N60FS typical characteristics (continued) figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve t 2 t 1 p dm 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z t jc (t) = 5.5 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square wave pulse duration [sec] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 100 ms dc 10 ms 1 ms 100 p s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 i d , drain current [a] t c , case temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2
note : 1. v gs = 0 v 2. i d = 250 p a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5
note : 1. v gs = 10 v 2. i d = 1 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c]
q?v~zy??q?v?_rb]{|?aqcabfq HFS2N60FS fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf .
200nf 12v same type as dut 10v dut r g l i d
q?v~zy??q?v?_rb]{|?aqcabfq HFS2N60FS fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
q?v~zy??q?v?_rb]{|?aqcabfq HFS2N60FS package dimension 0.70 0.20 0.20 3.30 0.20 15.87 0.20 12.42 0.20 2.54typ 6.68 0.20 0.80 0.20 1.47max 2.54 0.20 0.20 0.50 0.20 2.76 0.20 2.54typ 9.75 0.20 3 0.20 { v t y y w m g to-220fm to-220f
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